Effects of cooling rate on the structural Al-p+ layer for n-type silicon solar cell

DOI

10.2991/icmit-16.2016.150How to use a DOI?

Keywords

the structure of Al-p+ layer, cooling rate, n-type silicon solar cell

Abstract

In this paper, we have made a simple Al-p+ layer on n-type silicon wafers with a commercially available aluminum paste, screen-printing and traditional annealing furnace. The influences of firing cooling rate on the structure and thickness of Al-Si recrystalline layer are discussed. By changing the cooling rate and peak temperature, we find the general relationship between cooling rate and the structure of p+-layer. Relatively complete and uniform structure was obtained by slowing down cooling rate between peak temperature and 550 C. The result of the present work implies that a moderate thick pn junction can be formed by lower cooling rate using peak temperature range from 830 C to 880 C.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Xianfeng Feng
AU  - Chang Liu
PY  - 2016/04
DA  - 2016/04
TI  - Effects of cooling rate on the structural Al-p+ layer for n-type silicon solar cell
BT  - Proceedings of the 2016 3rd International Conference on Mechatronics and Information Technology
PB  - Atlantis Press
SP  - 824
EP  - 828
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmit-16.2016.150
DO  - 10.2991/icmit-16.2016.150
ID  - Feng2016/04
ER  -