Precise electrical characteristics in light emitting diodes on patterned sapphire substrate

DOI

10.2991/icmit-16.2016.121How to use a DOI?

Keywords

Light-emitting diodes, patterned sapphire substrate, negative capacitance, electrical properties.

Abstract

Accurate electrical properties of semiconductor patterned sapphire substrate light emitting diodes large forward bias voltage were measured by alternating current small signal and I-V plot, as well as our self-built method, respectively. Patterned sapphire substrate light emitting diodes display an obvious negative capacitance at large forward bias which is unexpected and in conflict with Shockley's p-n junction theory that only includes increasing diffusion capacitance and certainly no negative capacitance but in good agreement with conventional sapphire substrate light emitting diodes. The exact relationship between voltage and frequency when negative capacitance appears in patterned sapphire substrate light emitting diodes.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yang Li
AU  - Qiongyong Xing
PY  - 2016/04
DA  - 2016/04
TI  - Precise electrical characteristics in light emitting diodes on patterned sapphire substrate
BT  - Proceedings of the 2016 3rd International Conference on Mechatronics and Information Technology
PB  - Atlantis Press
SP  - 672
EP  - 678
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmit-16.2016.121
DO  - 10.2991/icmit-16.2016.121
ID  - Li2016/04
ER  -