A design of IGBT with the hole current bypass structure

DOI

10.2991/icmit-16.2016.3How to use a DOI?

Keywords

IGBT; Hole current bypass; Ballast resistance; N Plus; Latch-up

Abstract

IGBTs modules have the characteristics widely used in industry, electric power, smart grid and other fields. But the IGBTs modules in the current working state, the device performance and reliability are facing severe challenges. This paper provides a new design of forming hole current bypass and integrated emitter ballast resistance structure by adjusting N+ region of the IGBT's MOSFET component structure , To improve the IGBT chip Latch-up problem and N Plus chip, the emitter current is more uniform.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Ge Zhao
AU  - Yaohua Wang
AU  - Mingchao Gao
AU  - Jiang Liu
AU  - Rui Jin
AU  - Jialiang Wen
PY  - 2016/04
DA  - 2016/04
TI  - A design of IGBT with the hole current bypass structure
BT  - Proceedings of the 2016 3rd International Conference on Mechatronics and Information Technology
PB  - Atlantis Press
SP  - 14
EP  - 17
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmit-16.2016.3
DO  - 10.2991/icmit-16.2016.3
ID  - Zhao2016/04
ER  -