Synthesis of Patterned AlN Nanoarray and its Photoluminance Property Investigation

DOI

10.2991/icmeim-17.2017.47How to use a DOI?

Keywords

AlN nanoarray Formatting, Photoluminance property, Microstructure, CVD

Abstract

Chemical vapor deposition (CVD) method is employed in the present paper to grow patterned Aluminium nitride (AlN) nanowire array. The AlN nanoarray is grown on Si substrate through patterned polystyrene spheres (PS) colloid template. The microstructure of AlN nanoarray is investigated by SEM, XRD and Photoluminescence (PL) spectrum. The results show that the full width at half-maximum (FWHM) of the XRD diffraction peaks of AlN nanostructure are very narrow, which means the good crystalline structure of the AlN nanowire. From the SEM photos, the cyclical morphology of the AlN nanostructure can be observed. The cycle is equal to the diameter of the PS template. The PL spectrum of the patterned AlN indicates that a strong and narrow band of 3.8 eV is emitted in the patterned AlN sample, which is due to the nitrogen vacancies in AlN.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Ming-zhe Hu
AU  - Zhi-wei Zeng
AU  - Yue Yin
AU  - Deng-hui Ji
PY  - 2017/02
DA  - 2017/02
TI  - Synthesis of Patterned AlN Nanoarray and its Photoluminance Property Investigation
BT  - Proceedings of the 2017 International Conference on Manufacturing Engineering and Intelligent Materials (ICMEIM 2017)
PB  - Atlantis Press
SP  - 278
EP  - 282
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmeim-17.2017.47
DO  - 10.2991/icmeim-17.2017.47
ID  - Hu2017/02
ER  -