Simulation Research on Solder Joint Residual Strain Energy of Au80/Sn20 Eutectic Soldering GaAs Chip
- DOI
- 10.2991/icismme-15.2015.306How to use a DOI?
- Keywords
- Au80/Sn20; eutectic soldering; FEM; residual stress; strain energy.
- Abstract
After Au80/Sn20 eutectic soldering GaAs chips process, Au80/Sn20 solder joints will have large residual stress and strain because of materials’ coefficient of thermal expansion (CTE) mismatch. Large strain deformation will lead to the chip position migration. On the other hand too much stress can make the interface micro cracks and affect the quality and long-term reliability of Au80/Sn20 solder joints. Choosing welding pressure, cooling rate and the thickness of the precast solder pieces as the key process parameters, and designing the L16 (43) orthogonal test table. According to the Au80 / Sn20 eutectic soldering real environment, using finite element analysis software ANSYS to establish the simulation model of Au80 / Sn20 eutectic soldering process. After simulation analysis, it got the maximum residual stress and the strain energy of the solder joint. The primary of the factors is cooling rate, the secondary of the factors is the thickness of the precast solder pieces and pressure is the last by range analysis. The achieved process parameters and forming residual stress and the strain energy of the relationship between solder joints can provide reference and guidance for practical production.
- Copyright
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Yajun Liu AU - Zhaohua Wu PY - 2015/07 DA - 2015/07 TI - Simulation Research on Solder Joint Residual Strain Energy of Au80/Sn20 Eutectic Soldering GaAs Chip BT - Proceedings of the First International Conference on Information Sciences, Machinery, Materials and Energy PB - Atlantis Press SP - 1439 EP - 1444 SN - 1951-6851 UR - https://doi.org/10.2991/icismme-15.2015.306 DO - 10.2991/icismme-15.2015.306 ID - Liu2015/07 ER -