Resistance Switching Behavior Dependent of Substrate Temperature for ZnMn2O4 Films Deposited by Magnetron Sputtering

DOI

10.2991/icimm-15.2015.117How to use a DOI?

Keywords

ZnMn2O4; resistance switching properties; substrate temperature; magnetron sputtering

Abstract

The effect of substrate temperature on the resistance switching properties and the endurance characteristics of ZnMn2O4 films, deposited on p-Si substrate by magnetron sputtering, was investigated. The ZnMn2O4 films deposited at various substrate temperatures are polycrystalline with spinel structure. The ZnMn2O4 films deposited at a substrate temperature of 500 have the highest RHRS, the biggest RHRS/RLRS and the highest VON. Good endurance characteristics have been observed in Ag/ZnMn2O4/p-Si devices deposited at 100 and 300 , the RHRS/RLRS ratio maintained at about 103 after successive 1000 switching cycles, and the stable resistive switching repeat cycles is over 1400, but the repeatable resistive switching cycles for the specimens deposited at 500 is just 50. These results indicated that the substrate temperature has significant influence on the endurance characteristic of Ag/ZnMn2O4/p-Si device.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Hua Wang
AU  - Zhida Li
AU  - Jiwen Xu
AU  - Ling Yang
PY  - 2015/07
DA  - 2015/07
TI  - Resistance Switching Behavior Dependent of Substrate Temperature for ZnMn2O4 Films Deposited by Magnetron Sputtering
BT  - Proceedings of the 5th International Conference on Information Engineering for Mechanics and Materials
PB  - Atlantis Press
SP  - 619
EP  - 623
SN  - 2352-5401
UR  - https://doi.org/10.2991/icimm-15.2015.117
DO  - 10.2991/icimm-15.2015.117
ID  - Wang2015/07
ER  -