Design of CMOS UWB Noise Amplifier with Noise Canceling Technology
Authors
Ya Gao, Ningzhang Wang, Yan Zhao
Corresponding Author
Ya Gao
Available Online March 2014.
- DOI
- 10.2991/icfcce-14.2014.13How to use a DOI?
- Keywords
- CMOS, UWB, low-noise amplifiers
- Abstract
A TSMC 0.18 µm RF CMOS low-noise amplifier (LNA) for 3 GHz–5GHz ultra-wideband (UWB) applications is presented. The designed LNA employs single-ended to differential conversion and is successfully implemented using the noise-canceling technique. This paper introduces common-gate stage performance and noise figure(NF)optimization. Simulation results show that the proposed circuit network achieves a voltage gain of 17.34dB-19.6dB and noise figure of 2.02dB-2.67dB over the band of interest, consuming 12.5mW from a 1.8V power supply voltage.
- Copyright
- © 2014, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Ya Gao AU - Ningzhang Wang AU - Yan Zhao PY - 2014/03 DA - 2014/03 TI - Design of CMOS UWB Noise Amplifier with Noise Canceling Technology BT - Proceedings of the 2014 International Conference on Future Computer and Communication Engineering PB - Atlantis Press SP - 51 EP - 54 SN - 1951-6851 UR - https://doi.org/10.2991/icfcce-14.2014.13 DO - 10.2991/icfcce-14.2014.13 ID - Gao2014/03 ER -