Analytical Model of Channel Electric Field Profile in FinFET

DOI

10.2991/icemie-16.2016.3How to use a DOI?

Keywords

double-gate MOSFET; FinFET; channel electrical field; velocity saturation

Abstract

A simple analytical model for the lateral channel electric field profile in the velocity saturation region of the FinFET with undoped body is proposed and developed by solving the Poisson Equation in the velocity saturation region with a simplified boundary condition. The model has been verified with two-dimensional numerical device simulators and good agreement is obtained. Using the model, the impact of geometrical parameters including silicon film thickness, gate oxide thickness, and the terminal biases on the maximum lateral channel electric field in the FinFET can be predicted.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Ming Fang
AU  - Jin He
AU  - Wen Wu
AU  - Wei Zhao
AU  - Ruonan Wang
AU  - Mansun Chan
AU  - Ping He
AU  - Lei Song
PY  - 2016/04
DA  - 2016/04
TI  - Analytical Model of Channel Electric Field Profile in FinFET
BT  - Proceedings of the 2016 International Conference on Electrical, Mechanical and Industrial Engineering
PB  - Atlantis Press
SP  - 10
EP  - 12
SN  - 2352-5401
UR  - https://doi.org/10.2991/icemie-16.2016.3
DO  - 10.2991/icemie-16.2016.3
ID  - Fang2016/04
ER  -