Numerical simulation and optimization of CdS/p-Si Heterojunction solar cells

DOI

10.2991/iceep-18.2018.260How to use a DOI?

Keywords

CdS/Si; heterojunction; solar cell; simulation; AFORS-HET

Abstract

In this paper, numerical simulation was made to analyze and optimize the important factors of CdS/p-Si heterojunction solar cell, which include work function of TCO layers and back surface field (BSF), thickness of CdS thin film and silicon substrate. The results of simulation indicated that the TCO work function is supposed to be lower than 4.4 eV, while the work function of BSF is supposed to be higher than 4.8 eV. The improper TCO work function is found to be the cause of the reverse electric field. The improper BSF work function also affects the solar cell performance, but does not cause the reverse electric field. The thickness of the CdS thin films has an important influence on the electrical performance of CdS/p-Si solar cell, the VOC and JSC decrease as the thickness of CdS thin film increases. Undoped CdS/p-Si solar cells were fabricated by thermal evaporation and the PCE of 10.63% was measured under standard condition after partial structure optimization of CdS/p-Si solar cell (the area of cell is 1cm2). The difference between the simulation and experiment result is discussed.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Chunyan Duan
AU  - Yingwen Zhao
AU  - Shenghao Li
AU  - Qun Ban
AU  - Yizhan Chen
AU  - Hui Shen
PY  - 2018/09
DA  - 2018/09
TI  - Numerical simulation and optimization of CdS/p-Si Heterojunction solar cells
BT  - Proceedings of the 2018 7th International Conference on Energy and Environmental Protection (ICEEP 2018)
PB  - Atlantis Press
SP  - 1463
EP  - 1469
SN  - 2352-5401
UR  - https://doi.org/10.2991/iceep-18.2018.260
DO  - 10.2991/iceep-18.2018.260
ID  - Duan2018/09
ER  -