Improved Electrical Performance for Multilayer MoS2 Transistors by Using a Fully Encapsulated Al2O3 Dielectric Layer

DOI

10.2991/iceep-18.2018.52How to use a DOI?

Keywords

multilayer MoS2, fully encapsulated Al2O3, transistor, field effect mobility

Abstract

A fully encapsulated Al2O3 dielectric is developed to improve device performance in multilayer MoS2 transistors. Compared with bottom gated MoS2 field effect transistors, top gated transistor with top Al2O3 dielectric layer and bottom Al2O3 passivation layer shows great electrical property improvement with an on-off current ratio of 2×105, a threshold voltage of 0.5 V, a subthreshold swing of 120 mV/dec and a high field effect mobility of 79 cm2 V−1 s−1, which are ascribed to optimized device structure as top gate/Al2O3/MoS2/Al2O3/SiO2/Si. Low threshold voltage and high field effect mobility are propitious to low power consumption solid-state electrons.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Zixuan Huang
PY  - 2018/09
DA  - 2018/09
TI  - Improved Electrical Performance for Multilayer MoS2 Transistors by Using a Fully Encapsulated Al2O3 Dielectric Layer
BT  - Proceedings of the 2018 7th International Conference on Energy and Environmental Protection (ICEEP 2018)
PB  - Atlantis Press
SP  - 298
EP  - 304
SN  - 2352-5401
UR  - https://doi.org/10.2991/iceep-18.2018.52
DO  - 10.2991/iceep-18.2018.52
ID  - Huang2018/09
ER  -