Analysis of Forward Tunnelling Current in GaN-based Blue LEDs

DOI

10.2991/iccsee.2013.207How to use a DOI?

Keywords

forward tunnelling current, GaN-based light-emitting diodes, defect-assisted tunnelling

Abstract

We present a systematic analysis of the forward tunnelling current in GaN-based blue light-emitting diodes by using the current-voltage (I-V) measurements from 100 K to 300 K. The semi-log forward I-V curves in the above temperature range exhibit typical features of defect-assisted tunnelling mechanism, such as the temperature independent current slope and an ideality factor larger than 2. Exponential bias- and temperature-dependent characteristics of the tunnelling current have been observed, which are due to the bias-induced route change of the diagonal tunnelling and thermally-induced band gap shrinkage effect in the GaN materials, respectively.

Copyright

© 2013, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Ren Jian
AU  - Lisha Li
AU  - Dawei Yan
AU  - Xiaofeng Gu
PY  - 2013/03
DA  - 2013/03
TI  - Analysis of Forward Tunnelling Current in GaN-based Blue LEDs
BT  - Proceedings of the 2nd International Conference on Computer Science and Electronics Engineering (ICCSEE 2013)
PB  - Atlantis Press
SP  - 822
EP  - 825
SN  - 1951-6851
UR  - https://doi.org/10.2991/iccsee.2013.207
DO  - 10.2991/iccsee.2013.207
ID  - Jian2013/03
ER  -