Design of a High Performance 5.2 GHz Low Phase Noise Voltage Controlled Oscillator Using 90nm CMOS Technology

DOI

10.2991/iccsee.2013.181How to use a DOI?

Keywords

design method, figure of merit, low phase noise, CMOS technology.

Abstract

In this paper, a novel Figure of Merit (FOM), low phase noise, LC-tank voltage-controlled oscillator (VCO) is presented. The work presents a fully integrated 5.2 GHz VCO designed in a 90nm CMOS process. The proposed VCO features a worst-case phase noise of -130.10dBc/Hz and -133.00 dBc/Hz at 600 kHz and 1 MHz frequency offset from 5.2GHz carrier is achieved. An optimization technique is used to design the excellent FOM. The FOM is -206.02dBc/Hz. It features a supply voltage of 2.7 V, with a core of only 0.5 mA.

Copyright

© 2013, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Mohammed A. Aqeeli
AU  - Zhirun Hu
PY  - 2013/03
DA  - 2013/03
TI  - Design of a High Performance 5.2 GHz Low Phase Noise Voltage Controlled Oscillator Using 90nm CMOS Technology
BT  - Proceedings of the 2nd International Conference on Computer Science and Electronics Engineering (ICCSEE 2013)
PB  - Atlantis Press
SP  - 715
EP  - 719
SN  - 1951-6851
UR  - https://doi.org/10.2991/iccsee.2013.181
DO  - 10.2991/iccsee.2013.181
ID  - Aqeeli2013/03
ER  -