“Photo Current” in The Dark from Ti/CdSe Schottky Diode

DOI

10.2991/iccsae-15.2016.142How to use a DOI?

Keywords

Ti/CdSe; Schottky; electrochemical deposition; dark current

Abstract

CdSe was electrochemically deposited on pure Ti from SeSO32- source forming Ti/CdSe Schottky diode with deposition time 113s, 225s and 450s. SEM and current-voltage were employed to study the photo-electronic properties of the Schottky diode. The results show interesting, unexpected phenomena. The current density and the open-circuit voltage of 113s in the dark Ti/CdSe are higher than its analogous devices. Then an interpretation was probably given.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Song-jie Han
AU  - Ping Wang
AU  - Liu-ying Zhao
AU  - Bi Jing
AU  - Fu-fang Zhou
PY  - 2016/02
DA  - 2016/02
TI  - “Photo Current” in The Dark from Ti/CdSe Schottky Diode
BT  - Proceedings of the 2015 5th International Conference on Computer Sciences and Automation Engineering
PB  - Atlantis Press
SP  - 756
EP  - 760
SN  - 2352-538X
UR  - https://doi.org/10.2991/iccsae-15.2016.142
DO  - 10.2991/iccsae-15.2016.142
ID  - Han2016/02
ER  -