Research status of metal/diamond interface

DOI

10.2991/icammce-18.2018.103How to use a DOI?

Keywords

diamond films, interface bonding, preparation methods, electrical properties, mechanical propertie

Abstract

The high thermal conductivity of diamond makes it very promising in the field of semiconductor devices, and the application of diamond film in electronic devices will inevitably involve the problem of contact with metal. What kind of metal/diamond interface that has good electrical and mechanical properties. Which method can obtain a more stable interface between the metal/diamond. Scientists have done a lot of research in these aspects, but there is no definite conclusion at present. This paper focuses on the preparation methods of metal/diamond interfaces, and the electrical and mechanical properties of the interfaces.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Chang Zhang
AU  - Fengbin Liu
PY  - 2018/05
DA  - 2018/05
TI  - Research status of metal/diamond interface
BT  - Proceedings of the 2018 3rd International Conference on Advances in Materials, Mechatronics and Civil Engineering (ICAMMCE 2018)
PB  - Atlantis Press
SP  - 481
EP  - 486
SN  - 2352-5401
UR  - https://doi.org/10.2991/icammce-18.2018.103
DO  - 10.2991/icammce-18.2018.103
ID  - Zhang2018/05
ER  -