Investigation of the lower temperature SiO2 surface passivation technology on InAs/GaSb superlattice detectors

DOI

10.2991/icamcs-16.2016.80How to use a DOI?

Keywords

superlattice, silicon oxide, surface-passivation, mechniasm.

Abstract

we report on the investigation of effective SiO2 passivated layer deposited at low temperatures. Comparison with the unpassivated photodiodes, at 77 K, the dark current density is reduced by one order of magnitude is achieved by introducing SiO2-passivated layer deposition technology at a lower temperature of 75 °C. The temperature-dependence and bias-dependence of the dark current are studied experimentally and correlated to the theory, and then the contribution of each dark current mechanism is also identified.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Ruiqin Peng
AU  - Shujie Jiao
AU  - Hongtao Li
AU  - Liancheng Zhao
PY  - 2016/06
DA  - 2016/06
TI  - Investigation of the lower temperature SiO2 surface passivation technology on InAs/GaSb superlattice detectors
BT  - Proceedings of the 2016 5th International Conference on Advanced Materials and Computer Science
PB  - Atlantis Press
SP  - 377
EP  - 381
SN  - 2352-5401
UR  - https://doi.org/10.2991/icamcs-16.2016.80
DO  - 10.2991/icamcs-16.2016.80
ID  - Peng2016/06
ER  -