Investigation of the Transverse Spread of Erbium Ions Implanted in SOI

DOI

10.2991/icaita-18.2018.31How to use a DOI?

Keywords

electro-optical materials; transverse distribution; Rutherford backscattering technique; ion implantation

Abstract

The Er (erbium) ions at energies of 200 - 500 keV and dose of 2×1015 ions/cm2 were implanted into the optical waveguide material SOI (Silicon - on - insulator) at room temperature ( RT ) under the angles of 0°, 45° and 60°, respectively. The range distribution of 200 - 500 keV, 2×1015 ions/cm2 Er ions implanted in SOI samples were measured by Rutherford backscattering (RBS) technique. The transverse distribution of 200 - 500 keV Er ions in SOI samples were calculated according to the experimental principle proposed by Seijiro Furukawa et al. The measured results are compared with Monte Carlo code, SRIM (Stopping and Range of Ions in Matter) predictions. It is found that the measured experimental values are in good agreement with the SRIM 2012 theoretical simulation results.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Xifeng Qin
AU  - Panpan Jiao
AU  - Xiaodi Lu
AU  - Jinhua Zhao
AU  - Qiao Zhuang
PY  - 2018/03
DA  - 2018/03
TI  - Investigation of the Transverse Spread of Erbium Ions Implanted in SOI
BT  - Proceedings of the 2018 2nd International Conference on Artificial Intelligence: Technologies and Applications (ICAITA 2018)
PB  - Atlantis Press
SP  - 122
EP  - 124
SN  - 1951-6851
UR  - https://doi.org/10.2991/icaita-18.2018.31
DO  - 10.2991/icaita-18.2018.31
ID  - Qin2018/03
ER  -