Organic Light Emitting Devices with Nano-ZnO Thin Films as Cathode Buffer Layer

DOI

10.2991/icadme-17.2017.43How to use a DOI?

Keywords

Organic light emitting device; ZnO cathode buffer layer; vacuum thermal evaporation; current density; luminous efficiency

Abstract

Organic light emitting devices (OLED) with the structure of ITO / TPD / Alq3 / ZnO / Al were prepared by vacuum thermal evaporation method. By establishing multi-layer structure model, we discussed the influence of Alq3 deposition thickness and ZnO buffer layer on the photoelectric performance of the device, got the relationship of current density and work voltage. The results show that ZnO buffer layer can produce additional dipole energy and reduce the electronic potential barrier of cathode, its best thickness is 3 nm, too thin or too thick will increase the driving voltage, block carriers injected. When the thickness of Alq3 film is 50 nm, the photoelectric performance is best, current density reaches 100 mA/cm2, the increase of Alq3 thickness will make the electronics through the layer become scarce, affect the compound with holes. The results provide theoretical guidance to optimize the design and increase the performance of OLED.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yinglian Wang
AU  - Junyao Ye
PY  - 2017/07
DA  - 2017/07
TI  - Organic Light Emitting Devices with Nano-ZnO Thin Films as Cathode Buffer Layer
BT  - Proceedings of the 2017 7th International Conference on Advanced Design and Manufacturing Engineering (ICADME 2017)
PB  - Atlantis Press
SP  - 218
EP  - 221
SN  - 2352-5401
UR  - https://doi.org/10.2991/icadme-17.2017.43
DO  - 10.2991/icadme-17.2017.43
ID  - Wang2017/07
ER  -