Thin HfSiN Films prepared by Magnetron Sputtering

DOI

10.2991/icadme-15.2015.74How to use a DOI?

Keywords

HfSiN thin films; magnetic sputtering; HfSiN/Cu/HfSiN/SiO2/Si

Abstract

HfSiN thin films were prepared by the solid solution of HfN and SiN precursor films through magnetron sputtering. The obtained films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). X-ray diffraction(XRD) measurements show that the films have amorphous structure in the as-deposited state. Scanning electronic microscopy (SEM) images show that crystalline grain size of the films increases with the annealing temperature. The results show that the resistivity and the components of the HfSiN/Cu/ HfSiN/SiO2/Si film do not have obvious change after being annealing at 550 in oxygen, and the HfSiN film can provide good barrier performance for copper wire.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Zaiyu Zhang
AU  - Yilong Liang
AU  - Xianbang Jiang
PY  - 2015/10
DA  - 2015/10
TI  - Thin HfSiN Films prepared by Magnetron Sputtering
BT  - Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering
PB  - Atlantis Press
SP  - 371
EP  - 374
SN  - 2352-5401
UR  - https://doi.org/10.2991/icadme-15.2015.74
DO  - 10.2991/icadme-15.2015.74
ID  - Zhang2015/10
ER  -