Negative Differential Resistance in Doped Armchair Graphene Nanoribbons

DOI

10.2991/icacie-16.2016.10How to use a DOI?

Keywords

boron doping, armchair graphene nanoribbons, electronic transport properties, negative differential resistance

Abstract

Using nonequilibrium Green's functions in combination with density-functional theory, we investigate the electronic transport properties of boron doped armchair graphene nanoribbons. The I-V curve of the device shows an interesting negative differential resistance (NDR) phenomenon. We discover that the NDR is caused by armchair graphene nanoribbons electrodes with boron doped and can be tuned by the length of the AGNR in the central scattering region. This physics finding is helpful for us to design graphene-based nanoelectronic devices.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Chunmei Liu
AU  - Junling Wang
AU  - Zhuan Li
AU  - Yang Wang
AU  - Lili Zhao
PY  - 2016/10
DA  - 2016/10
TI  - Negative Differential Resistance in Doped Armchair Graphene Nanoribbons
BT  - Proceedings of the 2016 International Conference on Automatic Control and Information Engineering
PB  - Atlantis Press
SP  - 40
EP  - 43
SN  - 2352-5401
UR  - https://doi.org/10.2991/icacie-16.2016.10
DO  - 10.2991/icacie-16.2016.10
ID  - Liu2016/10
ER  -