The thermoelectric properties of In2O3 thin films deposited by direct current magnetron sputtering

DOI

10.2991/ic3me-15.2015.370How to use a DOI?

Keywords

thin film; In2O3; thermoelectric; sputtering

Abstract

In2O3 films were deposited on K9 glass by direct current magnetron sputtering with different oxygen partial pressure percentage. It is found that the films have a body-centered cubic structure, a relatively high transmission in the visible range and an optical band gap of around 3.75 eV. The conductivity of the films increases with the temperature increase up to around 470K due to the increase in the carrier concentration and then decreases due to scattering. The films are n-type and the absolute value of the Seebeck coefficient increases nearly linearly with the increase in the test temperature. The power factor of the films also roughly increases with the increase in the test temperature. It is found that oxygen partial pressure percentage has an effect on defects, electron density and Fermi level position. The films deposited with the oxygen partial pressure percentage of 80% have the best thermoelectric properties.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Fan Ye
AU  - Xiao-Qiang Su
AU  - Xing-Min Cai
AU  - Huan Wang
AU  - Zhuang-Hao Zheng
AU  - Guang-Xing Liang
AU  - Ping Fan
AU  - Dong-Ping Zhang
AU  - Jing-Ting Luo
PY  - 2015/08
DA  - 2015/08
TI  - The thermoelectric properties of In2O3 thin films deposited by direct current magnetron sputtering
BT  - Proceedings of the 3rd International Conference on Material, Mechanical and Manufacturing Engineering
PB  - Atlantis Press
SP  - 1917
EP  - 1922
SN  - 2352-5401
UR  - https://doi.org/10.2991/ic3me-15.2015.370
DO  - 10.2991/ic3me-15.2015.370
ID  - Ye2015/08
ER  -