Development of High Temperature Pressure Sensor for Oil and Gas Field Based on SOI

DOI

10.2991/ic3me-15.2015.274How to use a DOI?

Keywords

high temperature pressure sensor; silicon on insulator; anodic bonding; corrugated diaphragm; packaging

Abstract

According to the pressure testing requirements under high temperature and high pressure environment in oil and gas field, this paper introduced the design and development of a kind of high temperature high pressure sensor chip, and solved the problems of thermal stability of traditional piezoresistive sensors in special environment. The method of packaging SOI piezoresistive chip of high temperature resistance and glass plate in one through technology of anodic bonding under circumstance of vacuum, solved the problem of wide measurement range of pressure under high temperature circumstance. Meanwhile, insulating the medium under investigation from sensor chips by adopting corrugated diaphragm and high-temperature silicon oil as isolation materials, improved the adaptability of sensors.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yong Chen
AU  - Xiaohong Bai
AU  - Shuqin Xiao
PY  - 2015/08
DA  - 2015/08
TI  - Development of High Temperature Pressure Sensor for Oil and Gas Field Based on SOI
BT  - Proceedings of the 3rd International Conference on Material, Mechanical and Manufacturing Engineering
PB  - Atlantis Press
SP  - 1421
EP  - 1425
SN  - 2352-5401
UR  - https://doi.org/10.2991/ic3me-15.2015.274
DO  - 10.2991/ic3me-15.2015.274
ID  - Chen2015/08
ER  -