A physics-based electro-thermal model for FS IGBT
Authors
Yu Cheng, Guicui Fu
Corresponding Author
Yu Cheng
Available Online August 2015.
- DOI
- 10.2991/ic3me-15.2015.214How to use a DOI?
- Keywords
- FS IGBT, electro-thermal model, Fourier-based, RC network
- Abstract
A physics-based electro-thermal model implemented in the Matlab/Simulink is introduced for FS (field stop) IGBT (Insulated Gate Bipolar Transistor) in this paper. The model consists of Fourier-based FS IGBT model and equivalent RC thermal network model. The static testing of a commercial IGBT is performed to validate the model. The comparison between the simulation and experiment results proves the accuracy and efficiency of the model.
- Copyright
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Yu Cheng AU - Guicui Fu PY - 2015/08 DA - 2015/08 TI - A physics-based electro-thermal model for FS IGBT BT - Proceedings of the 3rd International Conference on Material, Mechanical and Manufacturing Engineering PB - Atlantis Press SP - 1107 EP - 1111 SN - 2352-5401 UR - https://doi.org/10.2991/ic3me-15.2015.214 DO - 10.2991/ic3me-15.2015.214 ID - Cheng2015/08 ER -