An SEU Hardened 65nm/4T-SRAM Cell for High Reliable Space Applications

DOI

10.2991/fmsmt-17.2017.126How to use a DOI?

Keywords

SEU, High reliable space

Abstract

A novel mono-stable 4T-SRAM cell is proposed in this paper. The cell is designed in 65nm LPCMOS process and simulated to find out the linear energy transfer threshold of SEU. T-CAD simulation results show that its LETth for data(1) is up to 41.6 MeV/mg/cm2, almost the same as DICE, and the data error rate can be reduce to 1.2ž10-11/bit.day with a particular duplication redundancy SRAM structure. The proposed 4T cell takes advantage of small cell size and solid anit-SEU ability, showing good potential to be used in SEU hardened SRAM.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Wendi Zhang
AU  - Liyang Pan
PY  - 2017/04
DA  - 2017/04
TI  - An SEU Hardened 65nm/4T-SRAM Cell for High Reliable Space Applications
BT  - Proceedings of the 2017 5th International Conference on Frontiers of Manufacturing Science and Measuring Technology (FMSMT 2017)
PB  - Atlantis Press
SP  - 635
EP  - 638
SN  - 2352-5401
UR  - https://doi.org/10.2991/fmsmt-17.2017.126
DO  - 10.2991/fmsmt-17.2017.126
ID  - Zhang2017/04
ER  -