Investigation of the Properties of Al-doped ZnO Thin Films with Sputtering Pressure Deposition by RF Magnetron Sputtering

DOI

10.2991/emim-17.2017.364How to use a DOI?

Keywords

Al-doped ZnO; RF magnetron sputtering; Sputtering pressure

Abstract

The aluminum doped ZnO thin films were prepared on quartz glass substrates by RF magnetron sputtering at room temperature with varying sputtering pressure. As the sputtering pressure increased, the crystallinity of AZO thin films improved and the surface crystallite size increased. The optimized AZO thin film obtained at the sputtering pressure of 1 Pa exhibited the lowest resistivity of 8.6ž10(^-3) úcm and an average transmittance of 74.15% in the wavelength range of 400 to 1000 nm.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Weiqiang Shuai
AU  - Yuehui Hu
AU  - Yichuan Chen
AU  - Fan Tong
AU  - Zixuan Lao
PY  - 2017/04
DA  - 2017/04
TI  - Investigation of the Properties of Al-doped ZnO Thin Films with Sputtering Pressure Deposition by RF Magnetron Sputtering
BT  - Proceedings of the 7th International Conference on Education, Management, Information and Mechanical Engineering (EMIM 2017)
PB  - Atlantis Press
SP  - 1785
EP  - 1788
SN  - 2352-538X
UR  - https://doi.org/10.2991/emim-17.2017.364
DO  - 10.2991/emim-17.2017.364
ID  - Shuai2017/04
ER  -