Design and process simulation on power device IGBT

DOI

10.2991/emeit.2012.467How to use a DOI?

Keywords

IGBT, Breakdown voltage, ON-resistance, TCAD

Abstract

An IGBT cell structure based on semiconductor physics were designed. The process parameters of the high-voltage IGBT have been calculated and adjusted. Using the optimal device’s dimensions, the doping concentration was analyzed systematically. Additionally, a simulating model of IGBT was compiled based on SENTAURUS PROCESS. According to this model simulation, an optimized device parameters’ design was further determined. Finally, the device drain-source breakdown voltage has satisfied a standard value of 1450V.Whereas its threshold voltage is 4.2V, which is in the prerequisite range of 3~5V.

Copyright

© 2012, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Hao-dong ZHANG
AU  - Miao LI
AU  - Jian ZHANG
AU  - Shou-guo ZHENG
AU  - Lan HU
PY  - 2012/09
DA  - 2012/09
TI  - Design and process simulation on power device IGBT
BT  - Proceedings of the 2nd International Conference on Electronic & Mechanical Engineering and Information Technology (EMEIT 2012)
PB  - Atlantis Press
SP  - 2112
EP  - 2115
SN  - 1951-6851
UR  - https://doi.org/10.2991/emeit.2012.467
DO  - 10.2991/emeit.2012.467
ID  - ZHANG2012/09
ER  -