A Cross-Coupled Ka-Band GaAs-pHEMT Based VCO

DOI

10.2991/cnct-16.2017.31How to use a DOI?

Keywords

Cross-Coupled, GaAs-pHEMT, Ka-Band, Voltage-Controlled Oscillator (VCO).

Abstract

A cross-coupled GaAs pseudomorphic high electron mobility transistor (pHEMT) based Ka-band voltage-controlled oscillator (VCO) is reported in this work, by using commercial OMMIC 0.13 m depletion-mode power pHEMT (D01PH) process. The simulation of the proposed VCO demonstrates an operating frequency range from 28.54 GHz to 32.44 GHz with the tuning range of 12.8%, an output power from 15.2 dBm to 15.9 dBm, total dc power consumption of 124 mW and power efficiency from 27.2% to 31.9%. The simulated phase noise is from -105.7 dBc/Hz to -100.4 dBc/Hz at 1 MHz offset frequency and the figure-of-merit (FoM) is -207.4 dBc/Hz at the center frequency of 30.3 GHz.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Kai Men
AU  - Lee Bai Song
AU  - Bharatha Kumar Thangarasu
AU  - Qiong Zou
AU  - Kiat Seng Yeo
PY  - 2016/12
DA  - 2016/12
TI  - A Cross-Coupled Ka-Band GaAs-pHEMT Based VCO
BT  - Proceedings of the International Conference on Computer Networks and Communication Technology (CNCT 2016)
PB  - Atlantis Press
SP  - 231
EP  - 236
SN  - 2352-538X
UR  - https://doi.org/10.2991/cnct-16.2017.31
DO  - 10.2991/cnct-16.2017.31
ID  - Men2016/12
ER  -