Surface Roughness Scattering of GaN Nanowire

DOI

10.2991/cmfe-15.2015.213How to use a DOI?

Keywords

III-V compound semiconductor, mobility, surface roughness scattering, nanowire, GaN

Abstract

Electron mobilities limited by surface roughness scattering (SRS) in GaN nanowire have been investigated theoretically. The mobility found to be sensitive to the nanowire radius and electron density. Results show that the larger radius nanowires exhibit considerably higher mobility than smaller radius. Moreover, mobility limited by SRS found to be increase with increasing electron density. Results in this study can be used to design parameters of nanowire-based transisitors to obtain higher electron mobility.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Peng Yang
AU  - Yan-Wu Lu
PY  - 2015/07
DA  - 2015/07
TI  - Surface Roughness Scattering of GaN Nanowire
BT  - Proceedings of the International Conference on Chemical, Material and Food Engineering
PB  - Atlantis Press
SP  - 868
EP  - 870
SN  - 2352-5401
UR  - https://doi.org/10.2991/cmfe-15.2015.213
DO  - 10.2991/cmfe-15.2015.213
ID  - Yang2015/07
ER  -