Analysis and Simulation on an ISFET with Back-Gated Structure and High-Mobility Channel Material

DOI

10.2991/cisia-15.2015.236How to use a DOI?

Keywords

ISFET; modeling and simulation; high mobility; back-gated; average sensitivity

Abstract

A back-gated structure for ion-sensitive field-effect transistor (ISFET) has been proposed. The characteristics of the device based on this proposed structure and with high-mobility channel material have been simulated and analyzed by Silvaco TCAD. The modeling and simulation methodologies have been investigated, and an average sensitivity approximate 49.56mV/pH is obtained. The detectable average sensitivity of drain current is about 54.23?A/pH with a high saturated drain current which is at the magnitude of 10-4A, indicating a promising application in biological, biochemical and medical fields.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - X. Wu
AU  - A. Z Jia
PY  - 2015/06
DA  - 2015/06
TI  - Analysis and Simulation on an ISFET with Back-Gated Structure and High-Mobility Channel Material
BT  - Proceedings of the International Conference on Computer Information Systems and Industrial Applications
PB  - Atlantis Press
SP  - 883
EP  - 885
SN  - 2352-538X
UR  - https://doi.org/10.2991/cisia-15.2015.236
DO  - 10.2991/cisia-15.2015.236
ID  - Wu2015/06
ER  -