Research on Saturation Detection Circuit for Power MosFET

DOI

10.2991/cisia-15.2015.45How to use a DOI?

Keywords

a half bridge topology; saturation test; short circuit protection; stray inductance

Abstract

With big projects implementation, such as space station and cargo spacecraft in orbit increasing the dosage of the secondary power supply, the requirement of increasing the for reliability, used in great quantities however on-orbit secondary power supply of power MosFET can only conservative derating use, no effective protection methods. Based on the half bridge topology of power circuit of MosFET possible failure mode analysis put forward a kind of power MosFET saturation detection circuit. Circuit is characterized by low detection threshold lag, shut off the fast response, junction temperature compensation. Refund saturation in this paper, the detection circuit is analyzed and pointed out that the stray inductance of moderate packaging cause impact on short circuit detection threshold.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - A. Wang
AU  - W.G Wang
AU  - Q. Zhang
AU  - R. Wu
PY  - 2015/06
DA  - 2015/06
TI  - Research on Saturation Detection Circuit for Power MosFET
BT  - Proceedings of the International Conference on Computer Information Systems and Industrial Applications
PB  - Atlantis Press
SP  - 169
EP  - 172
SN  - 2352-538X
UR  - https://doi.org/10.2991/cisia-15.2015.45
DO  - 10.2991/cisia-15.2015.45
ID  - Wang2015/06
ER  -