Modulation Performance of Blue Ingan Light-Emitting Diodes with P-Type Electron-Blocking Layer and N-Type Hole-Blocking Layer

DOI

10.2991/ceie-16.2017.65How to use a DOI?

Keywords

LED; Modulation Speed; EBL; HBL

Abstract

We have fabricated two blue light-emitting diodes (LEDs) samples with p-type electron-blocking Layer and n-type hole-blocking Layer for the modulation speed measurement. The experimental results show HBL can improve the modulation speed better for blue LED. The energy bands and recombination rates of both LEDs are investigated numerically within the APSYS software. The superior speed performance of LED with HBL can be attributed to its higher electron/hole recombination rate, which is verified by the simulation.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Guichu Chen
AU  - Zhaoxiong Zhao
PY  - 2016/10
DA  - 2016/10
TI  - Modulation Performance of Blue Ingan Light-Emitting Diodes with P-Type Electron-Blocking Layer and N-Type Hole-Blocking Layer
BT  - Proceedings of the International Conference on Communication and Electronic Information Engineering (CEIE 2016)
PB  - Atlantis Press
SP  - 516
EP  - 521
SN  - 2352-5401
UR  - https://doi.org/10.2991/ceie-16.2017.65
DO  - 10.2991/ceie-16.2017.65
ID  - Chen2016/10
ER  -