Proceedings of the 2016 International Conference on Advanced Materials Science and Environmental Engineering

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Design of RF Attenuator Based on PIN Diode

Authors
Xinfa Miao, Xiuhua Wang
Corresponding Author
Xinfa Miao
Available Online April 2016.
DOI
10.2991/amsee-16.2016.76How to use a DOI?
Keywords
PIN diode; attenuator; HMSP3816
Abstract

RF attenuator has been widely used in analog and radio circuit. Designed a wideband attenuator using a surface mount device that including four PIN diode. The attenuation can be adjusted by the control voltage. The attenuator has good matching characteristic and linearity in 300kHz~3GHz. The structure of the attenuator is simple. The attenuator can be designed and made easily. The attenuator is suitable in some fields.

Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2016 International Conference on Advanced Materials Science and Environmental Engineering
Series
Advances in Engineering Research
Publication Date
April 2016
ISBN
978-94-6252-209-1
ISSN
2352-5401
DOI
10.2991/amsee-16.2016.76How to use a DOI?
Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

risenwbib
TY  - CONF
AU  - Xinfa Miao
AU  - Xiuhua Wang
PY  - 2016/04
DA  - 2016/04
TI  - Design of RF Attenuator Based on PIN Diode
BT  - Proceedings of the 2016 International Conference on Advanced Materials Science and Environmental Engineering
PB  - Atlantis Press
SP  - 289
EP  - 290
SN  - 2352-5401
UR  - https://doi.org/10.2991/amsee-16.2016.76
DO  - 10.2991/amsee-16.2016.76
ID  - Miao2016/04
ER  -