Sic MOSFET Modeling and Simulation for Pspice

DOI

10.2991/ameii-15.2015.315How to use a DOI?

Keywords

Sic MOSFET; circuit model; Pspice.

Abstract

Sic (silicon carbide, Sic), represented by the third generation of semiconductor devices with its superior performance, has obvious advantages on the voltage level, working temperature, switching losses. Then the size, weight, cost of the power electronic conversion may be significantly decreased and making the performance of power electronic systems improved comprehensively. Sic MOSFET has aroused special attention, which shows a tremendous potential on high voltage, high power, high temperature applications. With the deepening of the research, building accurate Sic MOSFET device model is the key to power electronic circuit simulation. Accurate modeling is even more significant to help researchers know more information of device performance and do further design to take advantages of Sic MOSFET. In this paper, a simple PSpice model for Sic MOSFET, CMF20120 is presented, based on the large number of existing models of the power MOSFET discrete devices, according to CMF20120 library files provided by CREE incorporated company. As the comparisons among standard datasheet, the simulation results based on the proposed model match very well.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Xiafei Zhu
AU  - Guolin Xu
AU  - Shaokang Jiao
AU  - Zhibin Zhao
PY  - 2015/04
DA  - 2015/04
TI  - Sic MOSFET Modeling and Simulation for Pspice
BT  - Proceedings of the International Conference on Advances in Mechanical Engineering and Industrial Informatics
PB  - Atlantis Press
SP  - 1695
EP  - 1700
SN  - 2352-5401
UR  - https://doi.org/10.2991/ameii-15.2015.315
DO  - 10.2991/ameii-15.2015.315
ID  - Zhu2015/04
ER  -