Development of a Heater Structure Based on ITO Films Deposited by RF Magnetron Sputtering for Chip-scale Atomic Clock
- DOI
- 10.2991/ame-16.2016.171How to use a DOI?
- Keywords
- Lndium tin oxide, Physics package, Chip-scale atomic clock, Heater structure
- Abstract
The heater structure plays an important role in the chip-scale atomic clock (CSAC) to achieve the performance of low power consumption, and it is the most effective way to make the structure by depositing the indium tin oxide (ITO) for its heating performance and transparent property. The influence of the factors, including the RF power and the depositing pressure in the fabrication process, on the characteristics of the ITO film is investigated first in this paper. Then the key properties of the ITO film such as the depositing rate, the resistivity, the sheet resistance and the transmittance are tested. The depositing rate is tested by an AlphaStep D-100, the resistivity and the sheet resistance are measured using a four-probe method, and the transmittance is analyzed with a spectrophotometer U-4100. Based on the properties tested above, the optimized process parameters with an RF power of 70W, a substrate under room temperature and a depositing pressure of 0.2Pa are chosen to fabricate the heater structure. Finally, a heater structure with 60ohm resistance is designed and fabricated. Test results show that the heater structure can heat the physics package of the CSAC up to 85 oC in less than 420 seconds, which is suitable to be used in the CSACs.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Zhong-Shan Zhang AU - Liang Tang AU - Qing-Yun Ju AU - Lei Ji AU - Meng-Hui Zhi AU - Dong-Hai Qiao PY - 2016/06 DA - 2016/06 TI - Development of a Heater Structure Based on ITO Films Deposited by RF Magnetron Sputtering for Chip-scale Atomic Clock BT - Proceedings of the 2nd Annual International Conference on Advanced Material Engineering (AME 2016) PB - Atlantis Press SP - 1061 EP - 1065 SN - 2352-5401 UR - https://doi.org/10.2991/ame-16.2016.171 DO - 10.2991/ame-16.2016.171 ID - Zhang2016/06 ER -