Synthesis of Monolayer MoS2 by CVD Approach

DOI

10.2991/ame-16.2016.167How to use a DOI?

Keywords

CVD, monolayer MoS2, Raman, photoluminescence, bandgap

Abstract

The monolayer MoS2 thin film was deposited directly on quartz substrate by chemical vapor deposition (CVD) approach using MoO3 and sulfur powders as reactants. Raman spectroscopic and photoluminescence (PL) spectroscopic analyses were conducted to evaluate the structural and optical property of the grown MoS2 thin films. The Raman characteristic peaks in 385cm-1 (E2g1) and 405cm-1 (A1g) prove the grown film is monolayer MoS2. In comparision, we also found in some areas of the grown fim is bulk MoS2 film, the Raman characteristic peaks of which are 384 cm 1 (E2g1) and 409 cm 1 (A1g). And two pronounced emission peaks at 620 and 670 nm were observed in photoluminescence spectrum of monolayer MoS2. The results suggest that we synthesize monolayer MoS2 with optical bandgap of 1.85eV.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Y.Y. Wen
AU  - X.B. Zeng
AU  - X.X. Chen
AU  - W.Z. Wang
AU  - J. Ding
AU  - S.E. Xu
PY  - 2016/06
DA  - 2016/06
TI  - Synthesis of Monolayer MoS2 by CVD Approach
BT  - Proceedings of the 2nd Annual International Conference on Advanced Material Engineering (AME 2016)
PB  - Atlantis Press
SP  - 1034
EP  - 1039
SN  - 2352-5401
UR  - https://doi.org/10.2991/ame-16.2016.167
DO  - 10.2991/ame-16.2016.167
ID  - Wen2016/06
ER  -