The Effects of Dislocations on the Crystal Growth Rate of Silicon --A Molecular Dynamics Study

DOI

10.2991/ame-16.2016.165How to use a DOI?

Keywords

Dislocation, Crystal Growth Rate, Molecular Dynamics, Silicon

Abstract

Based on the Tersoff potential, we have investigated the effects of dislocations on the crystal growth rate of Si (110) rough interface by a molecular dynamics simulation. The atomic structures show that, the (110) interface morphology with a dislocation keeps flatness similar to that of dislocation-free. However, the interface with a dislocation contains a type of "V" groove, which is formed gradually around the outcrop of the dislocation. The results of the crystal growth rate exhibit that the dislocation prevents the crystal growth of Si, while the dislocation has a little influence on the crystal growth rate. The relationship between the dislocation and the crystal growth rate should relate to the difference of interface morphologies.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Download article (PDF)

TY  - CONF
AU  - C. Zhang
AU  - B. Liu
AU  - K. Li
AU  - N.G. Zhou
AU  - L. Zhou
PY  - 2016/06
DA  - 2016/06
TI  - The Effects of Dislocations on the Crystal Growth Rate of Silicon --A Molecular Dynamics Study
BT  - Proceedings of the 2nd Annual International Conference on Advanced Material Engineering (AME 2016)
PB  - Atlantis Press
SP  - 1023
EP  - 1027
SN  - 2352-5401
UR  - https://doi.org/10.2991/ame-16.2016.165
DO  - 10.2991/ame-16.2016.165
ID  - Zhang2016/06
ER  -