Study on Growth Conditions for High Quality Hydrogenated Amorphous Silicon Oxide Films

DOI

10.2991/ame-16.2016.160How to use a DOI?

Keywords

A-SiOx:H, Window layer, Fourier transform infrared spectroscopy, Optical band gap

Abstract

Wide band gap hydrogenated amorphous silicon oxide(a-SiOx:H) films were prepared by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Nitrous oxide(N2O), hydrogen(H2), silane(SiH4) were used as source gases. With the increase of N2O/SiH4 ratio from 0.5 to 2, the optical band gap of films changed in the range of 1.93~2.65eV, and the hydrogen and oxygen contents were increased as well. The microstructure factor(R*) was used to characterize the degree of defect of films, and it was found that the increase of oxygen content could reduce the defect states. Moreover, we also studied the influence of RF power on the process of preparation. After comprehensive analysis, we got the best quality of films with optical band gap of 2.27eV and refractive index of 2.21 when N2O/SiH4 ratio is 1 and RF power is 90W.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Chao-Chao Jiang
AU  - Jing Jin
AU  - Xing-Ling Qu
AU  - Lu Huang
AU  - Can Liu
AU  - Jia-Hua Min
AU  - Wei-Min Shi
PY  - 2016/06
DA  - 2016/06
TI  - Study on Growth Conditions for High Quality Hydrogenated Amorphous Silicon Oxide Films
BT  - Proceedings of the 2nd Annual International Conference on Advanced Material Engineering (AME 2016)
PB  - Atlantis Press
SP  - 986
EP  - 990
SN  - 2352-5401
UR  - https://doi.org/10.2991/ame-16.2016.160
DO  - 10.2991/ame-16.2016.160
ID  - Jiang2016/06
ER  -