Trench based stress modulation structure for 90nm-gate CESL strained N MOSFET

DOI

10.2991/amcce-17.2017.143How to use a DOI?

Keywords

CESL; Trench; Strained NMOSFET; SiN

Abstract

A novel trench based stress modulation structure for strained 90nm-gate N MOSFET is demonstrated in this letter. The numerical simulation using SENTAURUS SPROCESS shows that, with this structure, the channel stress can be changed from compressive to tensile in a case of compressive CESL strained device. The relationships between the channel stress and the trenches' size are also investigated and it is deduced that the optimized trench depth and width can both be set to be 0.4um. With the trenches' size optimized, the trench based device can achieve an output current 24% higher than that of the N MOSFET without the trench based structure.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Qian Luo
AU  - Changgui Tan
AU  - Xiangzhan Wang
AU  - Bin Liu
PY  - 2017/03
DA  - 2017/03
TI  - Trench based stress modulation structure for 90nm-gate CESL strained N MOSFET
BT  - Proceedings of the 2017 2nd International Conference on Automation, Mechanical Control and Computational Engineering (AMCCE 2017)
PB  - Atlantis Press
SP  - 810
EP  - 813
SN  - 2352-5401
UR  - https://doi.org/10.2991/amcce-17.2017.143
DO  - 10.2991/amcce-17.2017.143
ID  - Luo2017/03
ER  -