INFLUENCE OF ELASTIC STRAINS ON ZONE ENERGY DIAGRAM OF In1 – xGaxAs/GaAs HETEROSTRUCTURE

DOI

10.2991/aime-18.2018.69How to use a DOI?

Keywords

strained heterostructure, Gallium Arsenide, Indium Gallium Arsenide, deformation, strains, zone diagram

Abstract

The paper consists of calculation of strains in the In1–xGaxAs/GaAs heterostructure and their dependence on relation between the thicknesses of contacting semiconductors. It also features the examination of how concentration of components and relation between the thicknesses of layers influences the key parameters of the zone energy diagram of heterostructure.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - L.S. Lunin
AU  - V.V. Nefedov
PY  - 2018/04
DA  - 2018/04
TI  - INFLUENCE OF ELASTIC STRAINS ON ZONE ENERGY DIAGRAM OF In1 – xGaxAs/GaAs HETEROSTRUCTURE
BT  - Proceedings of the International Conference "Actual Issues of Mechanical Engineering" (AIME 2018)
PB  - Atlantis Press
SP  - 358
EP  - 362
SN  - 2352-5401
UR  - https://doi.org/10.2991/aime-18.2018.69
DO  - 10.2991/aime-18.2018.69
ID  - Lunin2018/04
ER  -