PROPERTIES OF NARROW-GAP SOLID SOLUTIONS OF NEAR INFRARED BAND OPTOELECTRONIC DEVICES

DOI

10.2991/aime-18.2018.19How to use a DOI?

Keywords

solid solution, gradient epitaxy, small mesa diode, Gallium antimonide, solid junction, photo-luminescence spectra

Abstract

The paper consists of analysis of the results obtained in the course of experiments on creation of lightemitting solid solutions on the basis of Gallium antimonide within the framework of the gradient liquid phase epitaxy method. Analysis of the kinetics of the crystallization process in epitaxial layers shows that the speed of GaBi melt migration increases along with concentration of Bismuth in the melt and rise of temperature of thermomigration, which permits to manage the operational properties of solid solution composition of the created material. Experiments on research of the structural perfection of layers GsSbBi show that the dislocation density on the surface of the “matrix-layer” section is higher than in the solid solution and substrate. It is found that the method of gradient liquid phase epitaxy is preferred for obtaining of hardware components for optoelectronics with IR diapason. The paper also suggests a constructive outline for use of materials as hardware components of light-emitting diode.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - A.V. Blagin
AU  - N. A. Nefedova
AU  - V.V. Nefedov
PY  - 2018/04
DA  - 2018/04
TI  - PROPERTIES OF NARROW-GAP SOLID SOLUTIONS OF NEAR INFRARED BAND OPTOELECTRONIC DEVICES
BT  - Proceedings of the International Conference "Actual Issues of Mechanical Engineering" (AIME 2018)
PB  - Atlantis Press
SP  - 95
EP  - 99
SN  - 2352-5401
UR  - https://doi.org/10.2991/aime-18.2018.19
DO  - 10.2991/aime-18.2018.19
ID  - Blagin2018/04
ER  -