Investigation of gate pulse induced interface trap behaviours and its relationship with threshold voltage instability in Algan/Gan-On-Si MIS-Hemts

DOI

10.2991/aest-16.2016.42How to use a DOI?

Keywords

Algan/Gan-On-Si MIS-Hemts; trap behaviours; threshold voltage instability.

Abstract

By measuring transfer characterises before and after a given number of specific pulse cycles applied on the gate electrode for AlGaN/GaN MIS-HEMTs, the threshold voltage (Vth) instability is investigated. Furthermore, by measuring the change in transient gate capacitance (ΔC) under different pulses, the effect of applied gate pulse on interface traps in AlGaN/GaN MIS-HEMTs is studied. These gate pulse induced states are believed to be responsible for the Vth instability in AlGaN/GaN MIS-HEMTs.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Bin Dong
AU  - Jie Lin
AU  - Ning Wang
AU  - Lingli Jiang
AU  - Zongdai Liu
AU  - Kai Cheng
AU  - Hongyu Yu
PY  - 2016/11
DA  - 2016/11
TI  - Investigation of gate pulse induced interface trap behaviours and its relationship with threshold voltage instability in Algan/Gan-On-Si MIS-Hemts
BT  - Proceedings of the 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)
PB  - Atlantis Press
SP  - 326
EP  - 331
SN  - 1951-6851
UR  - https://doi.org/10.2991/aest-16.2016.42
DO  - 10.2991/aest-16.2016.42
ID  - Dong2016/11
ER  -